Field-effect transistors based on heterojunctions of hydrogen-terminated diamond and hexagonal boron nitride can offer surface carrier mobilities as high as 680 cm2 V–1 s–1.
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Tordjman, M. Diamond electronics with high carrier mobilities. Nat Electron 5, 21–22 (2022). https://doi.org/10.1038/s41928-021-00707-5
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DOI: https://doi.org/10.1038/s41928-021-00707-5
