Correction to: Scientific Reports https://doi.org/10.1038/s41598-021-01768-4, published online 17 November 2021
The original version of this Article contained an error in the Acknowledgments section.
“This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP; Ministry of Science, ICT and Future Planning, NRF- 2019R1A2C1009816 and NRF- 2019M3F5A1A01076973) and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2009-0082580).”
now reads:
“This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP; Ministry of Science, ICT and Future Planning, NRF- 2019R1A2C1009816 and NRF-2019M3F5A1A01076973).”
The original Article has been corrected.
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Amir, W., Shin, J., Shin, K. et al. Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors. Sci Rep 11, 23667 (2021). https://doi.org/10.1038/s41598-021-02854-3
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DOI: https://doi.org/10.1038/s41598-021-02854-3
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